PART |
Description |
Maker |
M28F256-12C1 M28F256-12C3TR M28F256-12C1TR M28F256 |
32K X 8 FLASH 12V PROM, 120 ns, PQCC32 PLASTIC, LCC-32
|
ST Microelectronics
|
DPZ256S32IW-17C DPZ256S32IW-25C DPZ256S32IW-15C DP |
1M X 8 FLASH 12V PROM MODULE, 170 ns, PSMA64 1M X 8 FLASH 12V PROM MODULE, 250 ns, PSMA64 1M X 8 FLASH 12V PROM MODULE, 150 ns, PSMA64 1M X 8 FLASH 12V PROM MODULE, 120 ns, PSMA64
|
Hitachi,Ltd. Twilight Technology, Inc.
|
LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44 1M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO44 2M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp. SHARP ELECTRONICS CORP
|
CAT28F010GI-12TE13 CAT28F010T14I-90TE13 |
128K X 8 FLASH 12V PROM, 120 ns, PQCC32 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON SEMICONDUCTOR
|
M28W231-120N1TR M28W231-120N6TR M28W231-180N5TR M2 |
256K X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, TSOP-40 256K X 8 FLASH 12V PROM, 180 ns, PDSO40 10 X 20 MM, TSOP-40 256K X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, TSOP-40 256K X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, TSOP-40
|
ST Microelectronics
|
M28V841-100N3RTR M28V841-150N3R M28V841-120N3RTR M |
1M X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40 1M X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40 1M X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
|
ST Microelectronics
|
M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī 256K X 8 FLASH 12V PROM, 70 ns, PDSO44
|
STMICROELECTRONICS
|
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68 1M X 32 FLASH 3V PROM, 120 ns, CQFP68
|
Micross Components
|
CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 Bulk Erase Flash Memory, 1Mb 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http:// CATALYST[Catalyst Semiconductor] ON SEMICONDUCTOR
|
SST49LF004B10 SST49LF004B SST49LF004B-33-4C-NHE SS |
512K X 8 FLASH 3V PROM, 120 ns, PDSO32 4 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
http:// Silicon Storage Technology, Inc
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